(China (Mainland))
Product Summary
The TOSHIBA TLP521-1 consists of a photo transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP521-2 offers two isolated channels in an eight lead plastic DIP package, while the TLP521-4 provides four isolated channels in a sixteen plastic DIP package.
Parametrics
Absolute maximum ratings:(1)Forward current, IF: 70mA; (2)Forward current derating, ΔIF /℃: 0.93 (Ta ≥ 50℃)mA/℃; (3)Pulse forward current, IFP: 1(100μ pulse, 100pps)A; (4)Reverse voltage, VR: 5V; (5)Junction temperature, Tj: 125℃; (6)Collector-emitter voltage, VCEO: 55V; (7)Emitter-collector voltage, VECO: 7V; (8)Collector current, IC: 50mA; (9)Collector power dissipation(1 circuit), PC: 150mW; (10)Collector power dissipation derating (1 circuit Ta ≥ 25℃), ΔPC /℃: -1.5mW/℃; (11)Junction temperature, Tj: 125℃; (12)Storage temperature range, Tstg: -55 to 125℃; (13)Operating temperature range, Topr: -55 to 100℃; (14)Lead soldering temperature, Tsol: 260(10 s)℃; (15)Total package power dissipation, PT: 250mW; (16)Total package power dissipation derating (Ta ≥ 25℃), ΔPT/℃: 2.5mW/℃; (17)Isolation voltage, BVS: 2500 (AC, 1min, R.H.≤ 60%)Vrms.
Features
Features: (1)Collector-emitter voltage: 55 V (min); (2)Current transfer ratio: 50% (min); (3)Rank GB: 100% (min); (4)Isolation voltage: 2500 Vrms (min); (5)UL recognized, made in Japan: UL1577, file No. E67349; (6)UL recognized, made in Thailand: UL1577, file No. E152349.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 TLP521-1GB |
Other |
|
Data Sheet |
Negotiable |
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TLP521-1-4 |
Other |
|
Data Sheet |
Negotiable |
|
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TLP521-1(Y,F,T) |
Toshiba |
Transistor Output Optocouplers PCOUPLER GaAs Ired x |
Data Sheet |
Negotiable |
|
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|
TLP521-1 |
Other |
|
Data Sheet |
Negotiable |
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